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Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial

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Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial

Voltage - Supply : 1.8V~3.3V

Frequency Stability : ±50ppm

Description : 1.8V~3.3V SMD2520-4P Oscillators RoHS

Mfr. Part # : DSC1001DE1-100.0000

Model Number : DSC1001DE1-100.0000

Package : SMD2520-4P

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Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides high reliability, making it suitable for rugged, industrial, and portable applications. Available in industry-standard packages, it offers a pin-for-pin "drop-in" replacement for standard crystal oscillators, leading to reduced power consumption and longer battery life.

Product Attributes

Brand: Microchip Technology Inc.
Certifications: MIL-STD 883 Shock and Vibration Resistant, Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Units	Conditions
Frequency Range	F0	1		150	MHz	Single Frequency
	Frequency Tolerance	f			10	ppm	Includes frequency variations due to initial tolerance, temperature and power supply voltage
				20	ppm
				25	ppm
			50	ppm
Aging	f			5	ppm	1 year @ +25C
Operating Voltage	VDD	1.7		3.6	V	Recommended Operating Conditions
		1.8		3.3	V	Electrical Characteristics
		1.8		3.3	V	Electrical Characteristics (VDD = 1.8 to 3.3V; TA = +85C)
		1.8		3.3	V	Electrical Characteristics (VDD = 1.8 to 3.3V; TA = +85C)
		1.8		3.3	V	Electrical Characteristics (VDD = 1.8 to 3.3V; TA = +85C)
Operating Temperature Range	TA	40		+105	C	Ordering Option L
		40		+85	C	Ordering Option I
		20		+70	C	Ordering Option E
Standby Current	IDD			15	A	T = +25C
Operating Current (1 MHz)	IDD		6	6.3	mA	VDD = 1.8V, CL = 0 pF, RL = , T = +25C
Operating Current (150 MHz)	IDD		8.3	11.9	mA	VDD = 1.8V, CL = 0 pF, RL = , T = +25C
Output Startup Time	tSU		1.0	1.3	ms	T = +25C
Output Disable Time	tDA		20	100	ns
Output Duty Cycle	SYM	45		55	%
Input Logic Level High	VIH	0.75 x VDD			V
Input Logic Level Low	VIL			0.25 x VDD	V
Output Logic Level High (DSC1001, CL=15pF)	VOH	0.8 x VDD			V	4 mA, VDD = 1.8V
Output Logic Level Low (DSC1001, CL=15pF)	VOL			0.2 x VDD	V	4 mA, VDD = 1.8V
Output Transition Rise Time (DSC1001, CL=15pF)	tR		1.4	3.0	ns	T = +25C, 20% to 80%
Output Transition Fall Time (DSC1001, CL=15pF)	tF		1.0	3.0	ns	T = +25C, 20% to 80%
Max. Cycle-to-Cycle Jitter	JCC		60		ps	f = 100 MHz
Period Jitter RMS	JP		10	15	psRMS	f = 100 MHz
Package Dimensions		2.5 x 2.0 x 0.85	3.2 x 2.5 x 0.85	5.0 x 3.2 x 0.85	mm	Ultra Miniature Footprint
Package Dimensions		7.0 x 5.0 x 0.85			mm	Ultra Miniature Footprint

2411041600_MICROCHIP-DSC1001DE1-100-0000_C1671612.pdf

Silicon MEMS CMOS Oscillator MICROCHIP DSC1001DE1-100.0000 Suitable for Rugged Portable Industrial Images

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